| PART |
Description |
Maker |
| MA4E2513 MA4E2513-1289 MA4E2513L-1289 MA4E2513L-12 |
SURMOUNT Low Barrier Tee 301Footprint Silicon Schottky Diodes
SURMOUNT Low Barrier Tee ??301??Footprint Silicon Schottky Diodes
|
|
| MADP-000552-12810T |
SURMOUNT PIN Diode
|
M/A-COM Technology Solu...
|
| MASW-001150-13160V5 |
SURMOUNT PIN Diode Switch Element
|
M/A-COM Technology Solutions, Inc.
|
| MASW-001150-1316 MASW-001150-13160P MASW-001150-13 |
SURMOUNT PIN Diode Switch Element with Thermal Terminal
|
M/A-COM Technology Solutions, Inc.
|
| 2SD882S-X-AA3-R 2SD882S-X-AB3-R 2SD882S-X-T92-B 2S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MEDIUM POWER LOW VOLTAGE TRANSISTOR 中功率低电压晶体
|
??『绉???′唤??????
UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc.
Agilent (Hewlett-Packard)
|
| BAW156 Q62702-A922 |
From old datasheet system
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode)
|
SIEMENS AG
Siemens Group
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BAV170 Q62702-A920 |
From old datasheet system
Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode) 硅低漏二极管阵列（低泄漏应用中速切换时间普通阴极）
|
SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| 2SB1182L-X-TN3-T 2SB1182G-X-TN3-R 2SB1182G-X-TN3-T |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
|
Unisonic Technologies
|
| D882SSL-X-AE3-R D882SSG-X-AE3-R D882SS-X-AE3-R D88 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
|
Unisonic Technologies
|
| 2SB772G-X-T9N-R 2SB772L-X-T9N-R 2SB772G-X-TN3-T 2S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
|
Unisonic Technologies
|
